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| PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES * OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 * 4 PIN MINI MOLD PACKAGE: NE69039 NE69039 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 0.2 0.95 0.85 2 3 1.9 1 4 DESCRIPTION The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX output stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. The NE69039 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. +0.2 1.1 -0.1 +0.10 0.6 -0.05 1) Collector 2) Emitter 3) Base 4) Emitter 0.8 0.16 +0.10 -0.06 5 0 to 0.1 5 ELECTRICAL CHARACTERISTICS (TA = 25 C) PART NUMBER PACKAGE CODE SYMBOLS ICBO IEBO hFE P-1 GP PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 1 mA (Class AB) Duty 1/8 dBm dB % MS 5.0 50 UNITS A A 30 27.5 6.0 72 10.0 MIN NE69039 39 TYP MAX 2.5 2.5 C TON Maximum Device On Time California Eastern Laboratories NE69039 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C) SYMBOLS VCBO VCEO VEBO IC PT Tj TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9.0 6.0 2.0 300 200 (CW) 150 -65 to +150 1.9 2 3 OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2.4 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 1 4 1.0 1.0 APPLICATION (1) TX Amplifier for DECT +3 dBm Po = 27 dBm ORDERING INFORMATION PART NUMBER NE69039-T1 Note: 1. Lead material: Cu Lead plating: PbSn QTY 3K/REEL NE68839 NE68939 NE69039 (2) TX Amplifier for PHS -14 dBm P1 = 22 dBm ZIN (), ZOUT () DATA j50 PC2771T NE68939 NE69039 j25 j100 OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER 30 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) j10 ZIN Collector Efficency, C (%) ZOUT 0 0 Output Power, Pout (dBm) Pout 20 C 80 60 Collector Currents, IC (mA) 25 -j10 15 IC 10 GP 5 40 20 0 8 7 6 5 4 5 10 15 20 25 30 20 10 0 -j25 -j50 -j100 Power Gain, Gp (dB) ZOUT ZIN Input Power, Pin (dBm) TYPICAL DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB C IC GL 27.5 72 27 6.7 dBm % mA db IMPEDANCE LOOKING INTO DEVICE VCC = 3.6 V, ICQ = 1 mA, CLASS AB FREQUENCY (GHZ) 1.9 0.9 ZIN () 7.42+j14.2 4.0+j8.8 ZOUT () 15.8-j2.64 4.4-j4.6 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 07/06/2000 |
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